GT30J122 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT30J122
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
Tensión colector-emisor (Vce): 600
Voltaje de saturación colector-emisor (Vce sat): 2.1
Tensión emisor-compuerta (Veg): 20
Corriente del colector DC máxima (Ic): 30
Temperatura operativa máxima (Tj), °C: 150
Empaquetado / Estuche: 2-16F1A
Búsqueda de reemplazo de GT30J122 - IGBT
GT30J122 Datasheet (PDF)
..1. gt30j122.pdf Size:321K _toshiba
GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl
7.1. gt30j121.pdf Size:182K _toshiba
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ
7.2. gt30j126.pdf Size:187K _toshiba
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =
9.1. gt30j322.pdf Size:415K _toshiba
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25
9.2. gt30j324.pdf Size:190K _toshiba
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (ty
Otros transistores... GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , BT15T120ANF , GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 , GT40J322 , GT40J325 , GT50J121 .



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C