GT30J122
IGBT. Datasheet pdf. Equivalent
Type Designator: GT30J122
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 75
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 30
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.1
V @25℃
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 200
nS
Package:
TO-3PN
GT30J122
Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT30J122
Datasheet (PDF)
..1. Size:321K toshiba
gt30j122.pdf 
GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl
0.1. Size:192K toshiba
gt30j122a.pdf
GT30J122ADiscrete IGBTs Silicon N-Channel IGBTGT30J122AGT30J122AGT30J122AGT30J122A1. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. F
7.1. Size:182K toshiba
gt30j121.pdf
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ
7.2. Size:187K toshiba
gt30j126.pdf
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =
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