GT50J325 Todos los transistores

 ..1. Size:198K  toshiba
 gt50j325.pdf

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit mm Fast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.30 mJ (typ.) Eoff = 1.34 mJ

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 gt50j328.pdf

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit mm Fourth Generation IGBT Enhancement mode type High speed tf = 0.1 s (Typ.) Low saturation voltage VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter volt

 7.2. Size:615K  toshiba
 gt50j322.pdf

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed tf = 0.25 s (Typ.) (IC = 50A) Low saturation voltage VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25

 8.1. Size:439K  toshiba
 gt50j301.pdf

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHA

 8.2. Size:244K  toshiba
 gt50j341.pdf

GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 GT50J341 GT50J341 GT50J341 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) Sixth generation (2) Enhancemen