GT50J325 PDF and Equivalents Search

 

GT50J325 Specs and Replacement

Type Designator: GT50J325

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 240 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

Package: TO3P

 GT50J325 Substitution

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GT50J325 datasheet

 ..1. Size:198K  toshiba
gt50j325.pdf pdf_icon

GT50J325

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit mm Fast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.30 mJ (typ.) Eoff = 1.34 mJ... See More ⇒

 7.1. Size:226K  toshiba
gt50j328.pdf pdf_icon

GT50J325

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit mm Fourth Generation IGBT Enhancement mode type High speed tf = 0.1 s (Typ.) Low saturation voltage VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter volt... See More ⇒

 7.2. Size:615K  toshiba
gt50j322.pdf pdf_icon

GT50J325

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed tf = 0.25 s (Typ.) (IC = 50A) Low saturation voltage VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25... See More ⇒

 8.1. Size:439K  toshiba
gt50j301.pdf pdf_icon

GT50J325

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHA... See More ⇒

Specs: GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT30J122 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , TSG40N120CE , TSG60N100CE .

Keywords - GT50J325 transistor spec

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