GT50J341 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GT50J341Discrete IGBTs Silicon N-Channel IGBTGT50J341GT50J341GT50J341GT50J3411. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) Sixth generation(2) Enhancemen

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mmFourth Generation IGBT Enhancement mode type High speed : tf = 0.1 s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-emitter volt

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHA

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mmFast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25