All IGBT. GT50J341 Datasheet

 

GT50J341 IGBT. Datasheet pdf. Equivalent

Type Designator: GT50J341

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Gate-Emitter Voltage |Veg|, V: 25

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 175

Package: TO3P

GT50J341 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT50J341 Datasheet (PDF)

1.1. gt50j341 110608.pdf Size:244K _toshiba

GT50J341
GT50J341

GT50J341 Discrete IGBTs Silicon N-Channel IGBT GT50J341 GT50J341 GT50J341 GT50J341 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) Sixth generation (2) Enhancement mod

4.1. gt50j322 061101.pdf Size:615K _toshiba

GT50J341
GT50J341

GT50J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J322 FOURTH GENERATION IGBT Unit: mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25?s (Typ.) (IC = 50A) Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C)

4.2. gt50j325 061101.pdf Size:198K _toshiba

GT50J341
GT50J341

GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mm Fast Switching Applications Fourth generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 ?s (typ.) Low switching loss: Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Lo

4.3. gt50j328 110308.pdf Size:226K _toshiba

GT50J341
GT50J341

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Unit: mm Fourth Generation IGBT Enhancement mode type High speed : tf = 0.1 ?s (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 60

4.4. gt50j301 en wm 20061101.pdf Size:439K _toshiba

GT50J341
GT50J341

GT50J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J301 HIGH POWER SWITCHING APPLICATIONS Unit: mm MOTOR CONTROL APPLICATIONS Third generation IGBT Enhancement mode type High speed : tf = 0.30?s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTE

Datasheet: GT35J321 , GT40J121 , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT60M102 , GT60J323 , GT60J323H , TSG15N120CN , TSG25N120CN , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 .

 


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