APT30GP60JDF1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT30GP60JDF1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 245 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 295 pF
Qgⓘ - Carga total de la puerta, typ: 90 nC
Paquete / Cubierta: SOT227
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APT30GP60JDF1 Datasheet (PDF)
apt30gp60jdf1.pdf

TYPICAL PERFORMANCE CURVESAPT30GP60JDF1APT30GP60JDF1600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, the"UL Recog
apt30gp60b.pdf

APT30GP60B600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-247technology and a proprietary metal gate, this IGBT has been optimized forvery fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT provides a lower cost alter
apt30gp60bdf1.pdf

TYPICAL PERFORMANCE CURVESAPT30GP60BDF1APT30GP60BDF1600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, the
apt30gp60bdq1g.pdf

TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi
Otros transistores... APT25GP90BDF1 , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , APT30GP60B , APT30GP60BDF1 , APT30GP60BSC , IKW75N60T , APT30GT60AR , APT30GT60BR , APT30GT60BRD , APT30GT60CR , APT30GT60KR , APT32GU30B , APT33GF120B2RD , APT33GF120BR .
History: MMG400D060B6TC | IXBX28N300HV | APTGF50SK120T | BSM300GB120DLC | IXXH50N60C3 | IXGA48N60C3
History: MMG400D060B6TC | IXBX28N300HV | APTGF50SK120T | BSM300GB120DLC | IXXH50N60C3 | IXGA48N60C3



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