APT30GP60JDF1 Todos los transistores

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APT30GP60JDF1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT30GP60JDF1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 245

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 67

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: SOT227

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APT30GP60JDF1 Datasheet (PDF)

1.1. apt30gp60jdf1.pdf Size:207K _apt

APT30GP60JDF1
APT30GP60JDF1

TYPICAL PERFORMANCE CURVES APT30GP60JDF1 APT30GP60JDF1 600V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the "UL Recog

1.2. apt30gp60bsc.pdf Size:211K _apt

APT30GP60JDF1
APT30GP60JDF1

TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V ® POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode G power supplies and tail current sensitive applications. In many cases, the C

1.3. apt30gp60b.pdf Size:90K _apt

APT30GP60JDF1
APT30GP60JDF1

APT30GP60B 600V ® POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alter

1.4. apt30gp60bdf1.pdf Size:199K _apt

APT30GP60JDF1
APT30GP60JDF1

TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V ® POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode G power supplies and tail current sensitive applications. In many cases, the

1.5. apt30gp60bg.pdf Size:687K _igbt_a

APT30GP60JDF1
APT30GP60JDF1

APT30GP60B APT30GP60S 600V B ® POWER MOS 7 IGBT D3PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT pr

1.6. apt30gp60bdq1g.pdf Size:433K _igbt_a

APT30GP60JDF1
APT30GP60JDF1

TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

Otros transistores... APT25GP90BDF1 , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , APT30GP60B , APT30GP60BDF1 , APT30GP60BSC , FGA25N120ANTD , APT30GT60AR , APT30GT60BR , APT30GT60BRD , APT30GT60CR , APT30GT60KR , APT32GU30B , APT33GF120B2RD , APT33GF120BR .

 


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