All IGBT. APT30GP60JDF1 Datasheet

 

APT30GP60JDF1 Datasheet and Replacement


   Type Designator: APT30GP60JDF1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 245 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 67 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 295 pF
   Package: SOT227
      - IGBT Cross-Reference

 

APT30GP60JDF1 Datasheet (PDF)

 ..1. Size:207K  apt
apt30gp60jdf1.pdf pdf_icon

APT30GP60JDF1

TYPICAL PERFORMANCE CURVESAPT30GP60JDF1APT30GP60JDF1600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modepower supplies and tail current sensitive applications. In many cases, the"UL Recog

 5.1. Size:90K  apt
apt30gp60b.pdf pdf_icon

APT30GP60JDF1

APT30GP60B600V POWER MOS 7 IGBTA new generation of high voltage power IGBTs. Using punch-throughTO-247technology and a proprietary metal gate, this IGBT has been optimized forvery fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT provides a lower cost alter

 5.2. Size:199K  apt
apt30gp60bdf1.pdf pdf_icon

APT30GP60JDF1

TYPICAL PERFORMANCE CURVESAPT30GP60BDF1APT30GP60BDF1600V POWER MOS 7 IGBTTO-247A new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized for veryfast switching, making it ideal for high frequency, high voltage switch-modeGpower supplies and tail current sensitive applications. In many cases, the

 5.3. Size:433K  apt
apt30gp60bdq1g.pdf pdf_icon

APT30GP60JDF1

TYPICAL PERFORMANCE CURVES APT30GP60BDQ1(G) 600V APT30GP60BDQ1 APT30GP60BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

Datasheet: APT25GP90BDF1 , APT26GU30B , APT26GU30K , APT30GF60JU2 , APT30GF60JU3 , APT30GP60B , APT30GP60BDF1 , APT30GP60BSC , IKW75N60T , APT30GT60AR , APT30GT60BR , APT30GT60BRD , APT30GT60CR , APT30GT60KR , APT32GU30B , APT33GF120B2RD , APT33GF120BR .

History: NCE15T60BD | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | FD1200R17HP4-K-B2 | 2N6975 | TT050K065FQ

Keywords - APT30GP60JDF1 transistor datasheet

 APT30GP60JDF1 cross reference
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 APT30GP60JDF1 substitution
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