APT35GP120J Todos los transistores

 

APT35GP120J - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT35GP120J
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 284 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 29 nS
   Coesⓘ - Capacitancia de salida, typ: 252 pF
   Paquete / Cubierta: SOT227
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APT35GP120J Datasheet (PDF)

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apt35gp120j.pdf pdf_icon

APT35GP120J

APT35GP120J1200VMos 7 Ultra Fast IGBTThe Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"CISOTOP Low Conduction Loss 50 kHz operation @ 800V, 18A

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apt35gp120jdf2.pdf pdf_icon

APT35GP120J

TYPICAL PERFORMANCE CURVESAPT35GP120JDF2APT35GP120JDF21200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss

 0.2. Size:451K  apt
apt35gp120jdq2.pdf pdf_icon

APT35GP120J

TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 1200V APT35GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

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apt35gp120b2dq2g.pdf pdf_icon

APT35GP120J

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi

Otros transistores... APT30GT60KR , APT32GU30B , APT33GF120B2RD , APT33GF120BR , APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , SGT50T65FD1PN , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 .

History: APTGT200U170D4 | 7MBR50VP060-50 | APT50GS60SRDQ2G | BSM200GB60DLC | IXGH2N250 | HGT1S7N60B3D | APT50GF120B2R

 

 
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