All IGBT. APT35GP120J Datasheet

 

APT35GP120J IGBT. Datasheet pdf. Equivalent


   Type Designator: APT35GP120J
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 284 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 64 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 252 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: SOT227

 APT35GP120J Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT35GP120J Datasheet (PDF)

 ..1. Size:94K  apt
 apt35gp120j.pdf

APT35GP120J APT35GP120J

APT35GP120J1200VMos 7 Ultra Fast IGBTThe Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"CISOTOP Low Conduction Loss 50 kHz operation @ 800V, 18A

 0.1. Size:202K  apt
 apt35gp120jdf2.pdf

APT35GP120J APT35GP120J

TYPICAL PERFORMANCE CURVESAPT35GP120JDF2APT35GP120JDF21200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss

 0.2. Size:451K  apt
 apt35gp120jdq2.pdf

APT35GP120J APT35GP120J

TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 1200V APT35GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 4.1. Size:419K  apt
 apt35gp120b2dq2g.pdf

APT35GP120J APT35GP120J

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi

 4.2. Size:194K  apt
 apt35gp120b2df2.pdf

APT35GP120J APT35GP120J

TYPICAL PERFORMANCE CURVESAPT35GP120B2DF2APT35GP120B2DF21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100

 4.3. Size:85K  apt
 apt35gp120b.pdf

APT35GP120J APT35GP120J

APT35GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction Loss 100 kHz operation @ 800V, 14A Low Gate Charge

 4.4. Size:257K  microsemi
 apt35gp120bg.pdf

APT35GP120J APT35GP120J

APT35GP120BAPT35GP120BG*G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction

Datasheet: APT30GT60KR , APT32GU30B , APT33GF120B2RD , APT33GF120BR , APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , SGT40N60FD2PN , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 .

 

 
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