APT40GP60B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT40GP60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 543 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 29 nS
Coesⓘ - Capacitancia de salida, typ: 395 pF
Encapsulados: TO247
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APT40GP60B datasheet
apt40gp60b.pdf
APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4
apt40gp60b2df2.pdf
TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k
apt40gp60bg.pdf
APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4
apt40gp60b2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high
Otros transistores... APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , FGPF4633 , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR .
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