APT40GP60B - аналоги и описание IGBT

 

APT40GP60B - аналоги, основные параметры, даташиты

Наименование: APT40GP60B

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 543 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃

tr ⓘ - Время нарастания типовое: 29 nS

Coesⓘ - Выходная емкость, типовая: 395 pF

Тип корпуса: TO247

 Аналог (замена) для APT40GP60B

- подбор ⓘ IGBT транзистора по параметрам

 

APT40GP60B даташит

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apt40gp60b.pdfpdf_icon

APT40GP60B

APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4

 0.1. Size:197K  apt
apt40gp60b2df2.pdfpdf_icon

APT40GP60B

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k

 0.2. Size:109K  apt
apt40gp60bg.pdfpdf_icon

APT40GP60B

APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4

 0.3. Size:537K  apt
apt40gp60b2dq2g.pdfpdf_icon

APT40GP60B

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

Другие IGBT... APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , FGPF4633 , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR .

 

 

 

 

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