APT40GP90B2DF2 Todos los transistores

 

APT40GP90B2DF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT40GP90B2DF2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 543 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃

trⓘ - Tiempo de subida, typ: 27 nS

Coesⓘ - Capacitancia de salida, typ: 325 pF

Encapsulados: TMAX

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APT40GP90B2DF2 datasheet

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 apt40gp90b2df2.pdf pdf_icon

APT40GP90B2DF2

TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA R

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 apt40gp90b2dq2g.pdf pdf_icon

APT40GP90B2DF2

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

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APT40GP90B2DF2

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 apt40gp90b.pdf pdf_icon

APT40GP90B2DF2

MOSTRAR MÁS

Otros transistores... APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , JT075N065WED , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R .

History: RJH1BF7RDPQ-80 | IRG8P15N120KD | APT50GN60BG | TSG25N120CN | APT60GT60BRG | APT15GP90BDF1 | APT80GP60JDQ3

 

 

 

 

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