All IGBT. APT40GP90B2DF2 Datasheet

 

APT40GP90B2DF2 Datasheet and Replacement


   Type Designator: APT40GP90B2DF2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 325 pF
   Package: TMAX
      - IGBT Cross-Reference

 

APT40GP90B2DF2 Datasheet (PDF)

 ..1. Size:192K  apt
 apt40gp90b2df2.pdf pdf_icon

APT40GP90B2DF2

TYPICAL PERFORMANCE CURVESAPT40GP90B2DF2APT40GP90B2DF2900V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA R

 2.1. Size:440K  apt
 apt40gp90b2dq2g.pdf pdf_icon

APT40GP90B2DF2

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

 4.1. Size:159K  apt
 apt40gp90bg.pdf pdf_icon

APT40GP90B2DF2

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 4.2. Size:162K  apt
 apt40gp90b.pdf pdf_icon

APT40GP90B2DF2

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

SHOW MORE

Datasheet: APT35GT120JU2 , APT35GT120JU3 , APT40GF120JRD , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , IKW50N60H3 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R .

History: CM800DY-24S | KE703A | 2N6977 | IKP20N65H5 | NCE75ED120VTP | BSM50GD170DL | MMGT15H120XB6C

Keywords - APT40GP90B2DF2 transistor datasheet

 APT40GP90B2DF2 cross reference
 APT40GP90B2DF2 equivalent finder
 APT40GP90B2DF2 lookup
 APT40GP90B2DF2 substitution
 APT40GP90B2DF2 replacement

 

 
Back to Top

 


 
.