APT45GP120B2DF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT45GP120B2DF2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
trⓘ - Tiempo de subida, typ: 29 nS
Coesⓘ - Capacitancia de salida, typ: 300 pF
Encapsulados: TMAX
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APT45GP120B2DF2 datasheet
apt45gp120b2df2.pdf
APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES APT45GP120B2DF2 1200V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C Low Conduction Loss 10
apt45gp120b2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for
apt45gp120bg.pdf
APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge
apt45gp120b.pdf
APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge
Otros transistores... APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , SGT60U65FD1PT , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 .
History: GT60J323H | AOK50B60D1 | GT50J121 | APT40GP60B2DQ2G
History: GT60J323H | AOK50B60D1 | GT50J121 | APT40GP60B2DQ2G
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