All IGBT. APT45GP120B2DF2 Datasheet

 

APT45GP120B2DF2 Datasheet and Replacement


   Type Designator: APT45GP120B2DF2
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Package: TMAX
      - IGBT Cross-Reference

 

APT45GP120B2DF2 Datasheet (PDF)

 0.1. Size:196K  apt
 apt45gp120b2df2.pdf pdf_icon

APT45GP120B2DF2

APT45GP120B2DF2TYPICAL PERFORMANCE CURVESAPT45GP120B2DF21200VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCC Low Conduction Loss 10

 1.1. Size:436K  apt
 apt45gp120b2dq2g.pdf pdf_icon

APT45GP120B2DF2

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 3.1. Size:102K  apt
 apt45gp120bg.pdf pdf_icon

APT45GP120B2DF2

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

 3.2. Size:88K  apt
 apt45gp120b.pdf pdf_icon

APT45GP120B2DF2

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

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Datasheet: APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , IKW50N60T , APT45GP120J , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 .

History: IXYX120N120B3 | STGBL6NC60D | 1MBI400V-120-50 | BT15T60A8F | IQGB300N120I4 | 7MBR50SD120 | 2MBI900VXA-120P-50

Keywords - APT45GP120B2DF2 transistor datasheet

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