APT50GN120B2 Todos los transistores

 

APT50GN120B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT50GN120B2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 543 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 134 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 27 nS
   Coesⓘ - Capacitancia de salida, typ: 210 pF
   Paquete / Cubierta: TMAX
     - Selección de transistores por parámetros

 

APT50GN120B2 Datasheet (PDF)

 ..1. Size:187K  apt
apt50gn120b2.pdf pdf_icon

APT50GN120B2

TYPICAL PERFORMANCE CURVES APT50GN120B2APT50GN120B21200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Maxparameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r

 0.1. Size:190K  apt
apt50gn120b2g.pdf pdf_icon

APT50GN120B2

TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TMT-Maxresults in superior VCE(on) performance. Easy paralleling results from very t

 4.1. Size:226K  apt
apt50gn120l2dq2g.pdf pdf_icon

APT50GN120B2

TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result

 7.1. Size:292K  apt
apt50gn60bg.pdf pdf_icon

APT50GN120B2

TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

Otros transistores... APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 , CRG75T60AK3HD , APT50GP60B , APT50GP60B2DF2 , APT50GP60J , APT50GP60JDF2 , APT50GP60S , APT50GT120JU2 , APT50GT120JU3 , APT60GF120JRD .

History: IXGH48N60B3C1 | VS-GB100TP120N | FD800R33KF2C-K | SKM150GB174D | CM400DY-24NF | IGW75N60H3 | IKB40N65ES5

 

 
Back to Top

 


 
.