APT50GN120B2 Specs and Replacement
Type Designator: APT50GN120B2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 543 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 134 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 210 pF
Package: TMAX
APT50GN120B2 Substitution - IGBTⓘ Cross-Reference Search
APT50GN120B2 datasheet
apt50gn120b2.pdf
TYPICAL PERFORMANCE CURVES APT50GN120B2 APT50GN120B2 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Max parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r... See More ⇒
apt50gn120b2g.pdf
TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TM T-Max results in superior VCE(on) performance. Easy paralleling results from very t... See More ⇒
apt50gn120l2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result... See More ⇒
apt50gn60bg.pdf
TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and... See More ⇒
Specs: APT45GP120JDF2, APT50GF120B2R, APT50GF120JRD, APT50GF60B2RD, APT50GF60BR, APT50GF60HR, APT50GF60JU2, APT50GF60JU3, IKW40T120, APT50GP60B, APT50GP60B2DF2, APT50GP60J, APT50GP60JDF2, APT50GP60S, APT50GT120JU2, APT50GT120JU3, APT60GF120JRD
Keywords - APT50GN120B2 transistor spec
APT50GN120B2 cross reference
APT50GN120B2 equivalent finder
APT50GN120B2 lookup
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History: MIXA20W1200TML | MIEB101W1200EH
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