APT75GP120J Todos los transistores

 

APT75GP120J - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT75GP120J
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 543 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 128 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 49 nS
   Coesⓘ - Capacitancia de salida, typ: 545 pF
   Paquete / Cubierta: SOT227
     - Selección de transistores por parámetros

 

APT75GP120J Datasheet (PDF)

 ..1. Size:33K  apt
apt75gp120j.pdf pdf_icon

APT75GP120J

APT75GP120J1200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies.C Low Conduction Loss RBSOA rated Low Gate ChargeG

 0.1. Size:453K  apt
apt75gp120jdq3.pdf pdf_icon

APT75GP120J

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 0.2. Size:203K  apt
apt75gp120jdf3.pdf pdf_icon

APT75GP120J

TYPICAL PERFORMANCE CURVES APT75GP120JDF3APT75GP120JDF31200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"ISOTOPswitchmode power supplies. Low Conduction Loss

 4.1. Size:94K  apt
apt75gp120b2.pdf pdf_icon

APT75GP120J

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

Otros transistores... APT60GT60JR , APT60GT60JRD , APT60GU30B , APT65GP60B2 , APT65GP60J , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , NCE80TD65BT , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J , APT80GP60JDF3 , APT83GU30B , APT8GT60KR .

History: NGTB45N60SWG | SKM50GB12V | MIXA30WB1200TED | IXXX200N60C3 | IKD04N60RA | APT25GP90BDF1 | IRGIB15B60KD1P

 

 
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