All IGBT. APT75GP120J Datasheet

 

APT75GP120J IGBT. Datasheet pdf. Equivalent


   Type Designator: APT75GP120J
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 128 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 49 nS
   Coesⓘ - Output Capacitance, typ: 545 pF
   Qgⓘ - Total Gate Charge, typ: 324 nC
   Package: SOT227

 APT75GP120J Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT75GP120J Datasheet (PDF)

 ..1. Size:33K  apt
 apt75gp120j.pdf

APT75GP120J APT75GP120J

APT75GP120J1200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies.C Low Conduction Loss RBSOA rated Low Gate ChargeG

 0.1. Size:453K  apt
 apt75gp120jdq3.pdf

APT75GP120J APT75GP120J

TYPICAL PERFORMANCE CURVES APT75GP120JDQ3 1200V APT75GP120JDQ3POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 0.2. Size:203K  apt
 apt75gp120jdf3.pdf

APT75GP120J APT75GP120J

TYPICAL PERFORMANCE CURVES APT75GP120JDF3APT75GP120JDF31200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency"UL Recognized"ISOTOPswitchmode power supplies. Low Conduction Loss

 4.1. Size:94K  apt
 apt75gp120b2.pdf

APT75GP120J APT75GP120J

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

 4.2. Size:96K  apt
 apt75gp120b2g.pdf

APT75GP120J APT75GP120J

APT75GP120B21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCEC Low Conduction Loss 100 kHz operation @ 800V, 20A Low Gate Char

Datasheet: APT60GT60JR , APT60GT60JRD , APT60GU30B , APT65GP60B2 , APT65GP60J , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , BT15T120ANF , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , APT80GP60B2 , APT80GP60J , APT80GP60JDF3 , APT83GU30B , APT8GT60KR .

 

 
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