FGW15N120VD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGW15N120VD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 155 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 58 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
FGW15N120VD Datasheet (PDF)
fgw15n120vd.pdf

http://www.fujielectric.com/products/semiconductor/FGW15N120VD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 15AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circu
fgw15n120h.pdf

http://www.fujielectric.com/products/semiconductor/FGW15N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 15AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs
fgw15n120hd.pdf

http://www.fujielectric.com/products/semiconductor/FGW15N120HD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 15AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Ab
Otros transistores... APTGT75X120TE3 , APTLGF140U120T , APTLGF210U120T , APTLGF280U120T , APTLGF70U120T , 2PG006 , FGW15N120H , FGW15N120HD , IKW40T120 , FGW40N120H , FGW40N120HD , FGW40N120VD , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD .
History: IKY40N120CH3 | RJH1CM5DPQ-E0 | DL2G50SH6N | MMG200DR120B | SG15N12DP | IXGA50N60C4 | IXGT30N60C3D1
History: IKY40N120CH3 | RJH1CM5DPQ-E0 | DL2G50SH6N | MMG200DR120B | SG15N12DP | IXGA50N60C4 | IXGT30N60C3D1



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Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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