FGW15N120VD IGBT. Datasheet pdf. Equivalent
Type Designator: FGW15N120VD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 155 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 28 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Package: TO247
FGW15N120VD Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGW15N120VD Datasheet (PDF)
fgw15n120vd.pdf
http://www.fujielectric.com/products/semiconductor/FGW15N120VD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 15AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circu
fgw15n120h.pdf
http://www.fujielectric.com/products/semiconductor/FGW15N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 15AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs
fgw15n120hd.pdf
http://www.fujielectric.com/products/semiconductor/FGW15N120HD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 15AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Ab
Datasheet: APTGT75X120TE3 , APTLGF140U120T , APTLGF210U120T , APTLGF280U120T , APTLGF70U120T , 2PG006 , FGW15N120H , FGW15N120HD , IRG4PC50UD , FGW40N120H , FGW40N120HD , FGW40N120VD , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD .
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