FGW40N120VD Todos los transistores

 

FGW40N120VD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW40N120VD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 340 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 63 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 75 nS
   Coesⓘ - Capacitancia de salida, typ: 135 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

FGW40N120VD Datasheet (PDF)

 ..1. Size:597K  fuji
 fgw40n120vd.pdf pdf_icon

FGW40N120VD

http://www.fujielectric.com/products/semiconductor/FGW40N120VD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circu

 5.1. Size:714K  fuji
 fgw40n120wd.pdf pdf_icon

FGW40N120VD

http://www.fujielectric.com/products/semiconductor/FGW40N120WD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolu

 5.2. Size:574K  fuji
 fgw40n120w.pdf pdf_icon

FGW40N120VD

http://www.fujielectric.com/products/semiconductor/FGW40N120W Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolut

 5.3. Size:507K  fuji
 fgw40n120h.pdf pdf_icon

FGW40N120VD

http://www.fujielectric.com/products/semiconductor/FGW40N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs

MOSTRAR MÁS

Otros transistores... APTLGF280U120T , APTLGF70U120T , 2PG006 , FGW15N120H , FGW15N120HD , FGW15N120VD , FGW40N120H , FGW40N120HD , XNF15N60T , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD .

History: IXGP12N100 | AUIRGS4062D1 | SGM50PA12A6BTFD

 

 
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