FGW40N120VD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: FGW40N120VD
Тип транзистора: IGBT + Diode
Маркировка: 40G120VD
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 340 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 63 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 75 nS
Coesⓘ - Выходная емкость, типовая: 135 pF
Qgⓘ - Общий заряд затвора, typ: 320 nC
Тип корпуса: TO247
Аналог (замена) для FGW40N120VD
FGW40N120VD Datasheet (PDF)
fgw40n120vd.pdf
http://www.fujielectric.com/products/semiconductor/FGW40N120VD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circu
fgw40n120wd.pdf
http://www.fujielectric.com/products/semiconductor/FGW40N120WD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolu
fgw40n120w.pdf
http://www.fujielectric.com/products/semiconductor/FGW40N120W Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPV Power coditionnerInverter welding machineMaximum Ratings and Characteristics Equivalent circuit Absolut
fgw40n120h.pdf
http://www.fujielectric.com/products/semiconductor/FGW40N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs
fgw40n120hd.pdf
http://www.fujielectric.com/products/semiconductor/FGW40N120HD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 40AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Ab
Другие IGBT... APTLGF280U120T , APTLGF70U120T , 2PG006 , FGW15N120H , FGW15N120HD , FGW15N120VD , FGW40N120H , FGW40N120HD , IRG4PF50W , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD .
Список транзисторов
Обновления
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