FGW30N120HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGW30N120HD
Tipo de transistor: IGBT + Diode
Código de marcado: 30G120HD
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 53 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 105 pF
Qgⓘ - Carga total de la puerta, typ: 230 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de FGW30N120HD - IGBT
FGW30N120HD Datasheet (PDF)
fgw30n120hd.pdf
http://www.fujielectric.com/products/semiconductor/FGW30N120HD Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 30AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Ab
fgw30n120h.pdf
http://www.fujielectric.com/products/semiconductor/FGW30N120H Discrete IGBTDiscrete IGBT (High-Speed V series)1200V / 30AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abs
fgw30n60vd.pdf
http://www.fujielectric.com/products/semiconductor/FGW30N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 30AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit
Otros transistores... FGW40N120HD , FGW40N120VD , FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , IRG7S313U , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2