FGW35N60H Todos los transistores

 

FGW35N60H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW35N60H
   Tipo de transistor: IGBT
   Código de marcado: 35G60H
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 230 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 140 pF
   Qgⓘ - Carga total de la puerta, typ: 210 nC
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de FGW35N60H IGBT

   - Selección ⓘ de transistores por parámetros

 

FGW35N60H Datasheet (PDF)

 ..1. Size:556K  fuji
 fgw35n60h.pdf pdf_icon

FGW35N60H

http://www.fujielectric.com/products/semiconductor/FGW35N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 35AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 0.1. Size:565K  fuji
 fgw35n60hc.pdf pdf_icon

FGW35N60H

http://www.fujielectric.com/products/semiconductor/FGW35N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 35AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 0.2. Size:555K  fuji
 fgw35n60hd.pdf pdf_icon

FGW35N60H

http://www.fujielectric.com/products/semiconductor/FGW35N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 35AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

Otros transistores... FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD , HGTG30N60A4 , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD .

 

 
Back to Top

 


FGW35N60H   FGW35N60H   FGW35N60H  

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: DHG20T65D | G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2

 

 

 
Back to Top

 

Popular searches

2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor | irf640n | 2n3904 | bc547 datasheet

 


 
.