FGW35N60H IGBT. Datasheet pdf. Equivalent
Type Designator: FGW35N60H
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 64 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Package: TO247
FGW35N60H Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGW35N60H Datasheet (PDF)
fgw35n60h.pdf
http://www.fujielectric.com/products/semiconductor/FGW35N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 35AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol
fgw35n60hc.pdf
http://www.fujielectric.com/products/semiconductor/FGW35N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 35AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso
fgw35n60hd.pdf
http://www.fujielectric.com/products/semiconductor/FGW35N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 35AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso
Datasheet: FGW40N120W , FGW40N120WD , FGW25N120VD , FGW25N120W , FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD , IKW40N65WR5 , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD .
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