HGT1S20N35G3VLS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGTP20N35G3VL,HGT1S20N35G3VL,HGT1S20N35G3VLS20A, 350V N-Channel,December 2001Logic Level, Voltage Clamping IGBTsFeatures PackagesJEDEC TO-220AB Logic Level Gate DriveCOLLECTOREMITTER Internal Voltage ClampGATECOLLECTOR ESD Gate Protection(FLANGE) TJ = 175oC Ignition Energy CapableJEDEC TO-262AADescriptionEMITTERCOLLECTORThis N-Channel I

HGT1S20N60B3S, HGTP20N60B3,HGTG20N60B3Data Sheet December 200140A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oCHGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capabilityswitching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur