HGT1S20N35G3VLS Datasheet. Specs and Replacement

Type Designator: HGT1S20N35G3VLS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 375 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 10 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃

Package: TO263

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HGT1S20N35G3VLS datasheet

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HGT1S20N35G3VLS

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, December 2001 Logic Level, Voltage Clamping IGBTs Features Packages JEDEC TO-220AB Logic Level Gate Drive COLLECTOR EMITTER Internal Voltage Clamp GATE COLLECTOR ESD Gate Protection (FLANGE) TJ = 175oC Ignition Energy Capable JEDEC TO-262AA Description EMITTER COLLECTOR This N-Channel I... See More ⇒

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HGT1S20N35G3VLS

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oC HGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capability switching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .... See More ⇒

Specs: HGT1S12N60C3S9A, HGT1S1N120BNDS9A, HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLS9A, HGT1S1N120BNDS, HGT1S1N120CNDS, HGT1S20N35G3VL, GT30J122, HGT1S20N35G3VLS9A, HGT1S20N60B3S, HGT1S20N60C3, HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3RS9A, HGT1S20N60C3S, HGT1S2N120BNDS

Keywords - HGT1S20N35G3VLS transistor spec

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