FGW50N60HC Todos los transistores

 

FGW50N60HC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW50N60HC
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 360 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 95 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Coesⓘ - Capacitancia de salida, typ: 210 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de FGW50N60HC IGBT

   - Selección ⓘ de transistores por parámetros

 

FGW50N60HC Datasheet (PDF)

 ..1. Size:569K  fuji
fgw50n60hc.pdf pdf_icon

FGW50N60HC

http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 5.1. Size:565K  fuji
fgw50n60h.pdf pdf_icon

FGW50N60HC

http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 5.2. Size:560K  fuji
fgw50n60hd.pdf pdf_icon

FGW50N60HC

http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

 6.1. Size:625K  fuji
fgw50n60vda.pdf pdf_icon

FGW50N60HC

http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit

Otros transistores... FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , YGW60N65F1A2 , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D .

History: 1MBI1200U4C-170 | OST120N65H4UMF | IRG7PC28U | RCD1565SL1 | IRGB4045D | AOTF15B65M1 | IXGX82N120B3

 

 
Back to Top

 


 
.