FGW50N60HC - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: FGW50N60HC
Тип транзистора: IGBT + Diode
Маркировка: 50G60HC
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 360 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 95 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 70 nS
Coesⓘ - Выходная емкость, типовая: 210 pF
Qgⓘ - Общий заряд затвора, typ: 305 nC
Тип корпуса: TO247
Аналог (замена) для FGW50N60HC
FGW50N60HC Datasheet (PDF)
fgw50n60hc.pdf
http://www.fujielectric.com/products/semiconductor/FGW50N60HC Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso
fgw50n60h.pdf
http://www.fujielectric.com/products/semiconductor/FGW50N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol
fgw50n60hd.pdf
http://www.fujielectric.com/products/semiconductor/FGW50N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso
fgw50n60vda.pdf
http://www.fujielectric.com/products/semiconductor/FGW50N60VD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 50AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsInverter for Motor driveAC and DC Servo drive amplifierUninterruptible power supplyMaximum Ratings and Characteristics Equivalent circuit
Другие IGBT... FGW25N120WD , FGW30N120H , FGW30N120HD , FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGPF4533 , FGW50N60HD , FGW50N60VD , FGW75N60H , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2