HGT1S20N60B3S Todos los transistores

 

HGT1S20N60B3S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGT1S20N60B3S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 165 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Paquete / Cubierta: TO263
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HGT1S20N60B3S Datasheet (PDF)

 ..1. Size:197K  1
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HGT1S20N60B3S

HGT1S20N60B3S, HGTP20N60B3,HGTG20N60B3Data Sheet December 200140A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oCHGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capabilityswitching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .

 4.3. Size:112K  1
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HGT1S20N60B3S

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

Otros transistores... HGT1S14N36G3VL , HGT1S14N36G3VLS , HGT1S14N36G3VLS9A , HGT1S1N120BNDS , HGT1S1N120CNDS , HGT1S20N35G3VL , HGT1S20N35G3VLS , HGT1S20N35G3VLS9A , YGW60N65F1A2 , HGT1S20N60C3 , HGT1S20N60C3R , HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS .

History: 2MBI300S-120 | IXGX120N60B | KGF20N60KDA

 

 
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