HGT1S20N60B3S Datasheet. Specs and Replacement

Type Designator: HGT1S20N60B3S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 165 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Package: TO263

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HGT1S20N60B3S datasheet

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HGT1S20N60B3S

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oC HGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capability switching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .... See More ⇒

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HGT1S20N60B3S

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HGT1S20N60B3S

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as 600V Switching SOA Capability other high voltage switching applications. These... See More ⇒

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Specs: HGT1S14N36G3VL, HGT1S14N36G3VLS, HGT1S14N36G3VLS9A, HGT1S1N120BNDS, HGT1S1N120CNDS, HGT1S20N35G3VL, HGT1S20N35G3VLS, HGT1S20N35G3VLS9A, FGW75N60HD, HGT1S20N60C3, HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3RS9A, HGT1S20N60C3S, HGT1S2N120BNDS, HGT1S2N120BNS, HGT1S2N120CNDS

Keywords - HGT1S20N60B3S transistor spec

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