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NGTG15N60S1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTG15N60S1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 117

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 28

Capacitancia de salida (Cc), pF: 70

Empaquetado / Estuche: TO220

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NGTG15N60S1 Datasheet (PDF)

1.1. ngtg15n60s1.pdf Size:168K _igbt

NGTG15N60S1
NGTG15N60S1

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

3.1. ngtg15n120fl2.pdf Size:226K _igbt

NGTG15N60S1
NGTG15N60S1

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Ef

3.2. ngtg15n120fl2wg.pdf Size:226K _igbt

NGTG15N60S1
NGTG15N60S1

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http://onsemi.com Features • Extremely Ef

Otros transistores... TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , G12N60C3D , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W .

 


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Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


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