NGTG15N60S1 Datasheet. Specs and Replacement

Type Designator: NGTG15N60S1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 117 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO220

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NGTG15N60S1 datasheet

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NGTG15N60S1

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http //onsemi.... See More ⇒

 0.1. Size:124K  onsemi
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NGTG15N60S1

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com... See More ⇒

 7.1. Size:226K  onsemi
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NGTG15N60S1

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef... See More ⇒

 7.2. Size:226K  onsemi
 ngtg15n120fl2wg.pdf pdf_icon

NGTG15N60S1

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef... See More ⇒

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Specs: TGPF30N43P, CPV362M4FPBF, CPV362M4UPBF, CPV364M4UPBF, CPV364M4FPBF, CPV364M4KPBF, IRGSL4B60K, NGTB15N60S1, RJP30H1DPD, NGTB15N60EG, IXYY8N90C3, STGP19NC60K, AP05G120SW-HF, TSG10N120CN, AP05G120NSW-HF, AP20GT60SW, AP20GT60W

Keywords - NGTG15N60S1 transistor spec

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