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NGTG15N60S1 Spec and Replacement


   Type Designator: NGTG15N60S1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 117 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO220

 NGTG15N60S1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTG15N60S1 specs

 ..1. Size:168K  onsemi
 ngtg15n60s1.pdf pdf_icon

NGTG15N60S1

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http //onsemi.... See More ⇒

 0.1. Size:124K  onsemi
 ngtg15n60s1eg.pdf pdf_icon

NGTG15N60S1

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching www.onsemi.com... See More ⇒

 7.1. Size:226K  onsemi
 ngtg15n120fl2.pdf pdf_icon

NGTG15N60S1

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef... See More ⇒

 7.2. Size:226K  onsemi
 ngtg15n120fl2wg.pdf pdf_icon

NGTG15N60S1

NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef... See More ⇒

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Specs: TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , RJP63F3DPP-M0 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W .

Keywords - NGTG15N60S1 transistor spec

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