STGP19NC60K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP19NC60K  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 125 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 8 nS

Coesⓘ - Capacitancia de salida, typ: 127 pF

Encapsulados: TO220

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STGP19NC60K datasheet

 ..1. Size:531K  st
 stgp19nc60k.pdf pdf_icon

STGP19NC60K

STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 IGBT co-packaged with ultra fast free-wheeling 1 2 1 diode D2PAK TO-220 Applications High frequency inverters Motor drivers Description Figure 1.

 ..2. Size:543K  st
 stgb19nc60k stgp19nc60k.pdf pdf_icon

STGP19NC60K

STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 IGBT co-packaged with ultra fast free-wheeling 1 2 1 diode D2PAK TO-220 Applications High frequency inverters Motor drivers Description Figure 1.

 0.1. Size:1330K  st
 stgb19nc60kdt4 stgf19nc60kd stgp19nc60kd.pdf pdf_icon

STGP19NC60K

STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction RES IES 3 1 susceptibility) D2 PAK 3 Short-circuit withstand time 10 s 2 1 IGBT co-packaged with ultrafast free- TO-220FP TAB wheeling diode Applications

 0.2. Size:458K  st
 stgb19nc60kd stgf19nc60kd stgp19nc60kd.pdf pdf_icon

STGP19NC60K

STGB19NC60KD STGF19NC60KD - STGP19NC60KD 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) 3 3 Short circuit withstand time 10 s 1 2 1 IGBT co-packaged with ultra fast free-wheeling D2PAK TO-220 diode Applications 3 2 1 High frequency inverters TO-220FP Mot

MOSTRAR MÁS

Otros transistores... CPV364M4UPBF, CPV364M4FPBF, CPV364M4KPBF, IRGSL4B60K, NGTB15N60S1, NGTG15N60S1, NGTB15N60EG, IXYY8N90C3, IKW75N60T, AP05G120SW-HF, TSG10N120CN, AP05G120NSW-HF, AP20GT60SW, AP20GT60W, CI15T60, MMIX4B12N300, NGD8205A