AP20GT60SW Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP20GT60SW  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 125 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 75 pF

Encapsulados: TO3P

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AP20GT60SW datasheet

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 ap20gt60sw.pdf pdf_icon

AP20GT60SW

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter V

 6.1. Size:59K  ape
 ap20gt60p-hf.pdf pdf_icon

AP20GT60SW

AP20GT60P-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emi

 6.2. Size:95K  ape
 ap20gt60asp-hf.pdf pdf_icon

AP20GT60SW

AP20GT60ASP-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 19A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.7V@IC=19A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol

 6.3. Size:93K  ape
 ap20gt60i.pdf pdf_icon

AP20GT60SW

AP20GT60I RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol

MOSTRAR MÁS

Otros transistores... NGTB15N60S1, NGTG15N60S1, NGTB15N60EG, IXYY8N90C3, STGP19NC60K, AP05G120SW-HF, TSG10N120CN, AP05G120NSW-HF, MBQ50T65FDSC, AP20GT60W, CI15T60, MMIX4B12N300, NGD8205A, IXYA8N90C3D1, IXYP8N90C3D1, APT20GN60BG, APT20GN60KG