AP20GT60SW - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AP20GT60SW
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 125
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600
Напряжение насыщения коллектор-эмиттер (Ucesat): 1.8
Максимально допустимое напряжение эмиттер-затвор (Ueg): 20
Максимальный постоянный ток коллектора (Ic): 40
Максимальная температура перехода (Tj): 150
Время нарастания: 20
Емкость коллектора (Cc), pf: 75
Тип корпуса: TO247
Аналог (замена) для AP20GT60SW
AP20GT60SW Datasheet (PDF)
..1. ap20gt60sw.pdf Size:60K _ape
AP20GT60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),Typ.=1.8V@IC=20A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter V
6.1. ap20gt60asi-hf.pdf Size:95K _ape
AP20GT60ASI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 12AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter
6.2. ap20gt60asp-hf.pdf Size:95K _ape
AP20GT60ASP-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 19AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.7V@IC=19A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol
6.3. ap20gt60i.pdf Size:93K _ape
AP20GT60IRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.8V@IC=20AC RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vol
6.4. ap20gt60w.pdf Size:92K _ape
AP20GT60WRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 20A Low Saturation VoltageVCE(sat),typ.=1.8V@IC=20ACG RoHS Compliant ProductGCTO-3PEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltag
6.5. ap20gt60p-hf.pdf Size:59K _ape
AP20GT60P-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 20AG Low Saturation VoltageTO-220(P)CEVCE(sat),typ.=1.8V@IC=20AC RoHS Compliant & Halogen-FreeGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 600 VVGEGate-Emi
Другие IGBT... NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , GT30J122 , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG .



Список транзисторов
Обновления
IGBT: TGH60N65F2DS | TGH60N65F2DR | TGH40N65F2DS | TGH40N65F2DR | TGH40N60F2D | TGH40N135FD | TGH40N120F2DR | TGAN80N65F2DS | TGAN80N60F2DS | TGAN60N65F2DS | TGAN60N65F2DR