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MMIX4B12N300 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIX4B12N300
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 125
   Tensión máxima colector-emisor |Vce|, V: 3000
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 26
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.8
   Tensión máxima de puerta-umbral |VGE(th)|, V: 5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 140
   Capacitancia de salida (Cc), typ, pF: 56
   Carga total de la puerta (Qg), typ, nC: 62
   Paquete / Cubierta: SMPD

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MMIX4B12N300 Datasheet (PDF)

 ..1. Size:252K  ixys
mmix4b12n300.pdf

MMIX4B12N300
MMIX4B12N300

Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG

 8.1. Size:247K  ixys
mmix4b20n300.pdf

MMIX4B12N300
MMIX4B12N300

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS TransistorC2C1 VCE(sat) 3.2V G1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4G4E3E4C1Symbol Test Conditions Maximum RatingsG1VCES TC = 25C to 150C 3000 VE1C3VCGR TJ = 25C to 150C

 8.2. Size:245K  ixys
mmix4b22n300.pdf

MMIX4B12N300
MMIX4B12N300

Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000

 9.1. Size:244K  ixys
mmix4g20n250.pdf

MMIX4B12N300
MMIX4B12N300

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX4G20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1VC1 C2Q1 Q2( Electrically Isolated Tab)G2G1E2C4E1C3Q3 Q4 C2H-Bridge ConfigurationG2G4E2C4G3E3E4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TJ = 25C to 150C 2500 VVCGR T

Otros transistores... IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , CM20MD-12H , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 .

 

 
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