MMIX4B12N300 Todos los transistores

 

MMIX4B12N300 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMIX4B12N300

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125

Tensión colector-emisor (Vce): 3000

Voltaje de saturación colector-emisor (Vce sat): 2.8

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 26

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 140

Capacitancia de salida (Cc), pF: 56

Empaquetado / Estuche: SMPD

Búsqueda de reemplazo de MMIX4B12N300 - IGBT

 

MMIX4B12N300 Datasheet (PDF)

..1. mmix4b12n300.pdf Size:252K _ixys

MMIX4B12N300 MMIX4B12N300

Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG

8.1. mmix4b22n300.pdf Size:245K _ixys

MMIX4B12N300 MMIX4B12N300

Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000

8.2. mmix4b20n300.pdf Size:247K _ixys

MMIX4B12N300 MMIX4B12N300

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B20N300BIMOSFETTM MonolithicIC110 = 14ABipolar MOS TransistorC2C1 VCE(sat) 3.2V G1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4G4E3E4C1Symbol Test Conditions Maximum RatingsG1VCES TC = 25C to 150C 3000 VE1C3VCGR TJ = 25C to 150C

 9.1. mmix4g20n250.pdf Size:244K _ixys

MMIX4B12N300 MMIX4B12N300

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX4G20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1VC1 C2Q1 Q2( Electrically Isolated Tab)G2G1E2C4E1C3Q3 Q4 C2H-Bridge ConfigurationG2G4E2C4G3E3E4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TJ = 25C to 150C 2500 VVCGR T

Otros transistores... IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MGD623S , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 .

 

 
Back to Top

 


MMIX4B12N300
  MMIX4B12N300
  MMIX4B12N300
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: CI20T120P | 2M410G | 2M410V1 | 2M410V | 2M410B1 | 2M410B | 2M410A | JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C

 

 

 
Back to Top

 

Order TRANSISTORS