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MMIX4B12N300 Spec and Replacement


   Type Designator: MMIX4B12N300
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 26 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 140 nS
   Coesⓘ - Output Capacitance, typ: 56 pF
   Package: SMPD

 MMIX4B12N300 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMIX4B12N300 specs

 ..1. Size:252K  ixys
 mmix4b12n300.pdf pdf_icon

MMIX4B12N300

Preliminary Technical Information High Voltage, High Gain MMIX4B12N300 VCES = 3000V BIMOSFETTM Monolithic IC110 = 11A Bipolar MOS Transistor VCE(sat) 3.2V C2 C1 G1 G2 (Electrically Isolated Tab) E2C4 E1C3 G3 G4 C2 G2 E3E4 E2C4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TC = 25 C to 150 C 3000 V Isolated Tab E3E4 VCG... See More ⇒

 8.1. Size:247K  ixys
 mmix4b20n300.pdf pdf_icon

MMIX4B12N300

Preliminary Technical Information High Voltage, High Gain VCES = 3000V MMIX4B20N300 BIMOSFETTM Monolithic IC110 = 14A Bipolar MOS Transistor C2 C1 VCE(sat) 3.2V G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 G4 E3E4 C1 Symbol Test Conditions Maximum Ratings G1 VCES TC = 25 C to 150 C 3000 V E1C3 VCGR TJ = 25 C to 150 C... See More ⇒

 8.2. Size:245K  ixys
 mmix4b22n300.pdf pdf_icon

MMIX4B12N300

Advance Technical Information High Voltage, High Gain VCES = 3000V MMIX4B22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor C2 C1 VCE(sat) 2.7V G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 Symbol Test Conditions Maximum Ratings G4 E3E4 C1 VCES TJ = 25 C to 150 C 3000 ... See More ⇒

 9.1. Size:244K  ixys
 mmix4g20n250.pdf pdf_icon

MMIX4B12N300

Advance Technical Information High Voltage IGBT VCES = 2500V MMIX4G20N250 For Capacitor Discharge IC25 = 23A Applications VCE(sat) 3.1V C1 C2 Q1 Q2 ( Electrically Isolated Tab) G2 G1 E2C4 E1C3 Q3 Q4 C2 H-Bridge Configuration G2 G4 E2C4 G3 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TJ = 25 C to 150 C 2500 V VCGR T... See More ⇒

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Specs: IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , SGT40N60FD2PN , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 .

History: AOK20B60D1

Keywords - MMIX4B12N300 transistor spec

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