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WGW15G120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WGW15G120N
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 150
   Tensión máxima colector-emisor |Vce|, V: 1200
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 30
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.4
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 60
   Capacitancia de salida (Cc), typ, pF: 880
   Paquete / Cubierta: TO3PN

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WGW15G120N Datasheet (PDF)

 ..1. Size:433K  winsemi
wgw15g120n.pdf

WGW15G120N
WGW15G120N

WGW15G120NWGW15G120NWGW15G120NWGW15G120NLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) C low Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverterFrequency convertersI

 5.1. Size:442K  winsemi
wgw15g120w.pdf

WGW15G120N
WGW15G120N

WGW15G120WWGW15G120WWGW15G120WWGW15G120WLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) Clow Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverter Frequency converters In

Otros transistores... NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , GT30J122 , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B .

 

 
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