WGW15G120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WGW15G120N

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 150

Tensión máxima colector-emisor |Vce|, V: 1200

Tensión máxima puerta-emisor |Vge|, V: 20

Colector de Corriente Continua a 25℃ |Ic|, A: 30

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.4

Temperatura máxima de unión (Tj), ℃: 150

Tiempo de subida (tr), typ, nS: 60

Capacitancia de salida (Cc), typ, pF: 880

Paquete / Cubierta: TO3PN

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WGW15G120N Datasheet (PDF)

 ..1. Size:433K  winsemi
 wgw15g120n.pdf

WGW15G120NWGW15G120NWGW15G120NWGW15G120NLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) C low Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverterFrequency convertersI

 5.1. Size:442K  winsemi
 wgw15g120w.pdf

WGW15G120WWGW15G120WWGW15G120WWGW15G120WLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) Clow Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverter Frequency converters In

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