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WGW15G120N - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WGW15G120N

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.4

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 60

Capacitancia de salida (Cc), pF: 880

Empaquetado / Estuche: TO3PN

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WGW15G120N Datasheet (PDF)

1.1. wgw15g120w.pdf Size:442K _winsemi

WGW15G120N
WGW15G120N

WGW15G120W WGW15G120W WGW15G120W WGW15G120W Low Loss IGBT Low Loss IGBT Low Loss IGBT Low Loss IGBT Features ■ 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100℃ CE(sat) C ■ low Gate charge(Typ.= 85nC) ■ NPT Technology, Positive temperature coefficient ■ Low EMI ■ Pb-free lead plating; RoHS compliant Applications ■ General purpose inverter ■ Frequency converters ■ In

1.2. wgw15g120n.pdf Size:433K _winsemi

WGW15G120N
WGW15G120N

WGW15G120N WGW15G120N WGW15G120N WGW15G120N Low Loss IGBT Low Loss IGBT Low Loss IGBT Low Loss IGBT Features ■ 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100℃ CE(sat) C ■ low Gate charge(Typ.= 85nC) ■ NPT Technology, Positive temperature coefficient ■ Low EMI ■ Pb-free lead plating; RoHS compliant Applications ■ General purpose inverter ■ Frequency converters ■ I

 

Otros transistores... NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , RJP30E2DPP-M0 , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B .

 

 
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