HGT1S20N60C3S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S20N60C3S  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 164 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

trⓘ - Tiempo de subida, typ: 24 nS

Encapsulados: TO263

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HGT1S20N60C3S datasheet

 ..2. Size:140K  fairchild semi
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf pdf_icon

HGT1S20N60C3S

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

 ..3. Size:260K  onsemi
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HGT1S20N60C3S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... HGT1S20N35G3VL, HGT1S20N35G3VLS, HGT1S20N35G3VLS9A, HGT1S20N60B3S, HGT1S20N60C3, HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3RS9A, GT30F132, HGT1S2N120BNDS, HGT1S2N120BNS, HGT1S2N120CNDS, HGT1S2N120CN, HGT1S3N60A4DS, HGT1S3N60A4S, HGT1S3N60B3, HGT1S3N60B3DS