HGT1S20N60C3S Datasheet. Specs and Replacement

Type Designator: HGT1S20N60C3S  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 164 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 45 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 24 nS

Package: TO263

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HGT1S20N60C3S datasheet

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HGT1S20N60C3S

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .... See More ⇒

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HGT1S20N60C3S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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Specs: HGT1S20N35G3VL, HGT1S20N35G3VLS, HGT1S20N35G3VLS9A, HGT1S20N60B3S, HGT1S20N60C3, HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3RS9A, GT30F132, HGT1S2N120BNDS, HGT1S2N120BNS, HGT1S2N120CNDS, HGT1S2N120CN, HGT1S3N60A4DS, HGT1S3N60A4S, HGT1S3N60B3, HGT1S3N60B3DS

Keywords - HGT1S20N60C3S transistor spec

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