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AOK30B60D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK30B60D1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 208
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 60
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 44
   Capacitancia de salida (Cc), typ, pF: 153
   Paquete / Cubierta: TO247

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AOK30B60D1 Datasheet (PDF)

 ..1. Size:699K  aosemi
aok30b60d1.pdf

AOK30B60D1
AOK30B60D1

AOK30B60D1TM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 5.1. Size:695K  aosemi
aok30b60d.pdf

AOK30B60D1
AOK30B60D1

AOK30B60DTM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

Otros transistores... APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG , AP30G120W , AP30G100W , GT30F126 , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW , APT28GA60BD15 , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 .

 

 
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