AOK30B60D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK30B60D1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 208 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 44 nS
Coesⓘ - Capacitancia de salida, typ: 153 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AOK30B60D1 IGBT
Principales características: AOK30B60D1
aok30b60d1.pdf
AOK30B60D1 TM 600V, 30A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 30A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance
aok30b60d.pdf
AOK30B60D TM 600V, 30A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 30A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to
aok30b65m2.pdf
AOK30B65M2 TM 650V, 30A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 30A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok30b135w1.pdf
AOK30B135W1 TM 1350V, 30A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.8V Better thermal management Hi
Otros transistores... APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG , AP30G120W , AP30G100W , AOK40B65H2AL , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW , APT28GA60BD15 , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irf840 datasheet | ge10001 | irf830 | irfp450 | mj21193 | s9014 transistor | bc547 transistor datasheet | c945 datasheet







