AOK30B60D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK30B60D1
Tipo de transistor: IGBT
Polaridad de transistor: N-Channel
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 208
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 60
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 44
Capacitancia de salida (Cc), typ, pF: 153
Paquete / Cubierta: TO247
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AOK30B60D1 Datasheet (PDF)
aok30b60d1.pdf
AOK30B60D1TM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok30b60d.pdf
AOK30B60DTM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to
Otros transistores... APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG , AP30G120W , AP30G100W , IKW75N60T , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW , APT28GA60BD15 , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: HIA20N140IH-DA | HIA50N65IH-JA | HIA50N65H-SA | HIA50N65T-SA | HIA50N65H-JA | HIA50N65T-JA | HIA30N140CIH-DA | HIA40N120T-SA | HIW30N65T-SA | HIA30N65T-SA | HIA75N65H-SA