Справочник IGBT. AOK30B60D1

 

AOK30B60D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AOK30B60D1
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 44 nS
   Coesⓘ - Выходная емкость, типовая: 153 pF
   Тип корпуса: TO247

 Аналог (замена) для AOK30B60D1

 

 

AOK30B60D1 Datasheet (PDF)

 ..1. Size:699K  aosemi
 aok30b60d1.pdf

AOK30B60D1 AOK30B60D1

AOK30B60D1TM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 5.1. Size:695K  aosemi
 aok30b60d.pdf

AOK30B60D1 AOK30B60D1

AOK30B60DTM600V, 30A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 30Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

 7.1. Size:1259K  aosemi
 aok30b65m2.pdf

AOK30B60D1 AOK30B60D1

AOK30B65M2TM650V, 30A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 30A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.66V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 8.1. Size:1160K  aosemi
 aok30b135w1.pdf

AOK30B60D1 AOK30B60D1

AOK30B135W1TM1350V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 30A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.8V Better thermal management Hi

 8.2. Size:1028K  aosemi
 aok30b120d2.pdf

AOK30B60D1 AOK30B60D1

AOK30B120D2 TM1200V, 30A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI IC (TC=100 30AC) Better thermal management VCE(sat) (TC=25 1.77VC) High surge current capability Minimal gate spi

 8.3. Size:520K  aosemi
 aok30b135c1.pdf

AOK30B60D1 AOK30B60D1

AOK30B135C1TM 1350V, 30A Alpha RC-IGBTwith Monolithic Body Diode General Description Product Summary Latest AlphaRC-IGBT (RC-IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 30AC) Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 1.92VC)

Другие IGBT... APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG , AP30G120W , AP30G100W , YGW40N65F1A1 , AP30G120ASW , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW , APT28GA60BD15 , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 .

 

 
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