HGT1S2N120BNS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S2N120BNS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 104 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Encapsulados: TO263

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HGT1S2N120BNS datasheet

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HGT1S2N120BNS

HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oC The HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC members o

 4.1. Size:498K  1
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HGT1S2N120BNS

March 2005 HGTP2N120CN, HGT1S2N120CN 13A, 1200V, NPT Series N-Channel IGBT Features Description 13A, 1200V, TC = 25 C The HGTP2N120CN and HGT1S2N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150 C the best features of MOSF

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HGT1S2N120BNS

HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oC The HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC members

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HGT1S2N120BNS

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet January 2000 File Number 4680.2 13A, 1200V, NPT Series N-Channel IGBT Features The HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oC HGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

MOSTRAR MÁS

Otros transistores... HGT1S20N35G3VLS9A, HGT1S20N60B3S, HGT1S20N60C3, HGT1S20N60C3R, HGT1S20N60C3RS, HGT1S20N60C3RS9A, HGT1S20N60C3S, HGT1S2N120BNDS, CRG40T65AK5HD, HGT1S2N120CNDS, HGT1S2N120CN, HGT1S3N60A4DS, HGT1S3N60A4S, HGT1S3N60B3, HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D