HGT1S2N120BNS Даташит. Аналоги. Параметры и характеристики.
Наименование: HGT1S2N120BNS
Тип транзистора: IGBT
Маркировка: 2N120BN
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 104 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 12 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.45 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.8(typ) V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 11 nS
Qgⓘ - Общий заряд затвора, typ: 24 nC
Тип корпуса: TO263
- подбор IGBT транзистора по параметрам
HGT1S2N120BNS Datasheet (PDF)
hgtp2n120bnd hgt1s2n120bnds.pdf

HGTP2N120BND, HGT1S2N120BNDSData Sheet January 2000 File Number 4698.212A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oCThe HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oCmembers o
hgtp2n120cn hgt1s2n120cn.pdf

March 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures Description 13A, 1200V, TC = 25C The HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150C the best features of MOSF
hgtp2n120cnd hgt1s2n120cnds.pdf

HGTP2N120CND, HGT1S2N120CNDSData Sheet January 2000 File Number 4681.213A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oCThe HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oCmembers
hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf

HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at
Другие IGBT... HGT1S20N35G3VLS9A , HGT1S20N60B3S , HGT1S20N60C3 , HGT1S20N60C3R , HGT1S20N60C3RS , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , IRGP4063 , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D .
History: 1MBI2400U4D-170 | BLQG50T65FDLA-W | IRG4BC30FD1 | HGTP10N50C1D | MPBW50N65ED | BLQG50T65FDLA-K | 1MBI300HH-120L-50
History: 1MBI2400U4D-170 | BLQG50T65FDLA-W | IRG4BC30FD1 | HGTP10N50C1D | MPBW50N65ED | BLQG50T65FDLA-K | 1MBI300HH-120L-50



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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