AP50GT60SW-HF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50GT60SW-HF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 240 pF
Qgⓘ - Carga total de la puerta, typ: 118 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AP50GT60SW-HF IGBT
AP50GT60SW-HF Datasheet (PDF)
ap50gt60sw-hf.pdf

AP50GT60SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesCVCES 600V High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=1.85V@IC=45A CGC TO-3P Built-in Fast Recovery DiodeEG RoHS Compliant & Halogen-FreeEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emit
ap50g60sw.pdf

AP50G60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vo
ap50g60w-hf.pdf

AP50G60W-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesC High Speed Switching VCES 600V Low Saturation Voltage IC 40AVCE(sat),Typ.=2.5V@IC=40A RoHS Compliant & Halogen-FreeGCCTO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter
ap50g60sw-hf.pdf

AP50G60SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitte
Otros transistores... APT15GP60KG , APT15GP90BG , APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , BT60T60ANFK , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 .
History: BSM200GAR120DN2 | VS-GT140DA60U
History: BSM200GAR120DN2 | VS-GT140DA60U



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