APT35GP120JDQ2 Todos los transistores

 

APT35GP120JDQ2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT35GP120JDQ2
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 284 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 26 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 250 pF
   Qgⓘ - Carga total de la puerta, typ: 150 nC
   Paquete / Cubierta: SOT227
     - Selección de transistores por parámetros

 

APT35GP120JDQ2 Datasheet (PDF)

 ..1. Size:451K  apt
apt35gp120jdq2.pdf pdf_icon

APT35GP120JDQ2

TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 1200V APT35GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 2.1. Size:202K  apt
apt35gp120jdf2.pdf pdf_icon

APT35GP120JDQ2

TYPICAL PERFORMANCE CURVESAPT35GP120JDF2APT35GP120JDF21200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss

 3.1. Size:94K  apt
apt35gp120j.pdf pdf_icon

APT35GP120JDQ2

APT35GP120J1200VMos 7 Ultra Fast IGBTThe Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"CISOTOP Low Conduction Loss 50 kHz operation @ 800V, 18A

 4.1. Size:419K  apt
apt35gp120b2dq2g.pdf pdf_icon

APT35GP120JDQ2

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi

Otros transistores... APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , GT30J124 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B .

 

 
Back to Top

 


 
.