APT35GP120JDQ2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT35GP120JDQ2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 284 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 26 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 250 pF
Paquete / Cubierta: SOT227
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APT35GP120JDQ2 Datasheet (PDF)
apt35gp120jdq2.pdf
TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 1200V APT35GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592
apt35gp120jdf2.pdf
TYPICAL PERFORMANCE CURVESAPT35GP120JDF2APT35GP120JDF21200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss
apt35gp120j.pdf
APT35GP120J1200VMos 7 Ultra Fast IGBTThe Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"CISOTOP Low Conduction Loss 50 kHz operation @ 800V, 18A
apt35gp120b2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi
apt35gp120b2df2.pdf
TYPICAL PERFORMANCE CURVESAPT35GP120B2DF2APT35GP120B2DF21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100
apt35gp120b.pdf
APT35GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction Loss 100 kHz operation @ 800V, 14A Low Gate Charge
apt35gp120bg.pdf
APT35GP120BAPT35GP120BG*G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction
Otros transistores... APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , FGH40N60UFD , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B .
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