Справочник IGBT. APT35GP120JDQ2

 

APT35GP120JDQ2 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT35GP120JDQ2
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 284 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 26 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 20 nS
   Coesⓘ - Выходная емкость, типовая: 250 pF
   Qgⓘ - Общий заряд затвора, typ: 150 nC
   Тип корпуса: SOT227

 Аналог (замена) для APT35GP120JDQ2

 

 

APT35GP120JDQ2 Datasheet (PDF)

 ..1. Size:451K  apt
 apt35gp120jdq2.pdf

APT35GP120JDQ2 APT35GP120JDQ2

TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 1200V APT35GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 2.1. Size:202K  apt
 apt35gp120jdf2.pdf

APT35GP120JDQ2 APT35GP120JDQ2

TYPICAL PERFORMANCE CURVESAPT35GP120JDF2APT35GP120JDF21200V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss

 3.1. Size:94K  apt
 apt35gp120j.pdf

APT35GP120JDQ2 APT35GP120JDQ2

APT35GP120J1200VMos 7 Ultra Fast IGBTThe Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"CISOTOP Low Conduction Loss 50 kHz operation @ 800V, 18A

 4.1. Size:419K  apt
 apt35gp120b2dq2g.pdf

APT35GP120JDQ2 APT35GP120JDQ2

TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2(G) 1200V APT35GP120B2DQ2 APT35GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for hi

 4.2. Size:194K  apt
 apt35gp120b2df2.pdf

APT35GP120JDQ2 APT35GP120JDQ2

TYPICAL PERFORMANCE CURVESAPT35GP120B2DF2APT35GP120B2DF21200V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 100

 4.3. Size:85K  apt
 apt35gp120b.pdf

APT35GP120JDQ2 APT35GP120JDQ2

APT35GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction Loss 100 kHz operation @ 800V, 14A Low Gate Charge

 4.4. Size:257K  microsemi
 apt35gp120bg.pdf

APT35GP120JDQ2 APT35GP120JDQ2

APT35GP120BAPT35GP120BG*G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.EC Low Conduction

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